Invention Grant
- Patent Title: State retention power gated cell
- Patent Title (中): 状态保持力门控电池
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Application No.: US13965202Application Date: 2013-08-13
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Publication No.: US08816741B2Publication Date: 2014-08-26
- Inventor: Yifeng Liu , Zhe Chen , Shayang Zhang , Jian Zhou
- Applicant: Yifeng Liu , Zhe Chen , Shayang Zhang , Jian Zhou
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Charles Bergere
- Priority: CN201210551411 20121026
- Main IPC: H03K3/356
- IPC: H03K3/356 ; H03K3/012

Abstract:
A state retention power gated (SRPG) cell includes an input control circuit having an input coupled to an input signal and an output. The input control circuit includes has transistors configured as a first inverter transmission gate. The transistors also connect in series at least one transistor controlled by a power gating signal. A first latch has an input coupled to the output of the input control circuit and an output. A transmission gate has an input coupled to the output of the first latch and an output that is an output of the SRPG cell. A second latch has an input coupled to the output of the transmission gate and an output that also is an output of the SRPG cell. A second inverter transmission gate has an input coupled to the output of the second latch.
Public/Granted literature
- US20140118046A1 STATE RETENTION POWER GATED CELL Public/Granted day:2014-05-01
Information query
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