Invention Grant
- Patent Title: Linear image sensor in CMOS technology
- Patent Title (中): CMOS技术中的线性图像传感器
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Application No.: US13152333Application Date: 2011-06-03
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Publication No.: US08817150B2Publication Date: 2014-08-26
- Inventor: Benoit Giffard , Yvon Cazaux
- Applicant: Benoit Giffard , Yvon Cazaux
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oliff PLC
- Priority: FR1002360 20100603
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335 ; H04N5/374 ; H01L27/146 ; H04N5/372

Abstract:
A time-delay-integration image sensor comprises a matrix of pixels organized in rows and columns. Each pixel comprises a first photosensitive element, a storage node and a first transfer element connected between the first photosensitive element and the storage node, Each pixel further comprises a second photosensitive element, a second transfer element connected between the second photosensitive element and the storage node, and a third transfer element connected between the storage node and the second photosensitive element of an adjacent pixel of the column. A control circuit is configured to simultaneously command the first and second transfer elements to on state and the third transfer element to off state, and, in a distinct phase, to simultaneously command the first and third transfer elements to on state and the second transfer element to off state.
Public/Granted literature
- US20110298956A1 LINEAR IMAGE SENSOR IN CMOS TECHNOLOGY Public/Granted day:2011-12-08
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