利索-全球专利检索

  1. 登录
  2. 注册
发明授权
US08817538B2 Nonvolatile semiconductor memory device and method for erasing data thereof 有权
非易失性半导体存储器件及其数据的擦除方法

Nonvolatile semiconductor memory device and method for erasing data thereof
摘要：
A control circuit is configured to set a drain-side select transistor and a source-side select transistor connected to a selected memory string to non-conductive states. The control circuit is configured to apply a first voltage to a non-selected word line connected to a gate of a non-selected memory cell in the selected memory string. The control circuit is configured to apply a second voltage to a selected word line connected to a gate of a selected memory cell in the selected memory string. The second voltage is smaller than the first voltage in an erasing operation.
摘要（中）：

控制电路被配置为将连接到所选择的存储器串的漏极侧选择晶体管和源极侧选择晶体管设置为非导通状态。 控制电路被配置为对连接到所选择的存储器串中未选择的存储器单元的栅极的未选择字线施加第一电压。 控制电路被配置为对连接到所选择的存储器串中所选择的存储器单元的栅极的选定字线施加第二电压。 在擦除操作中第二电压小于第一电压。

公开/授权文献
信息查询
Espacenet
0/0