Methods are provided for operating a memory device. An exemplary method involves obtaining a standby current through a memory block and adjusting a supply voltage for the memory block based on the obtained standby current. An exemplary memory device includes a block of one or more memory cells, a voltage regulating element coupled to the block to provide a supply voltage to the block, a current sensing element coupled to the block to measure current through the block, and a control module coupled to the voltage regulating element and the current sensing element to adjust the supply voltage provided by the voltage regulating element based on a measured current through the block obtained from the current sensing element.