Invention Grant
- Patent Title: Semiconductor fabrication apparatus and temperature adjustment method
- Patent Title (中): 半导体制造装置和温度调节方法
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Application No.: US13259893Application Date: 2010-03-29
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Publication No.: US08818545B2Publication Date: 2014-08-26
- Inventor: Kazuyoshi Matsuzaki , Sumie Nagaseki
- Applicant: Kazuyoshi Matsuzaki , Sumie Nagaseki
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2009-086927 20090331; JP2009-228051 20090930
- International Application: PCT/JP2010/055569 WO 20100329
- International Announcement: WO2010/113875 WO 20101007
- Main IPC: G06F19/00
- IPC: G06F19/00 ; H01L21/67 ; H01J37/32

Abstract:
A semiconductor fabrication apparatus includes a semiconductor wafer mounting table having a cavity therein; and a nozzle which jets a liquefied temperature adjustment medium having a temperature equal to or less than a targeted temperature to an inner wall of the cavity in order to adjust a temperature of the semiconductor wafer mounting table to the targeted temperature. The semiconductor fabrication apparatus further includes a pressure detecting unit for detecting an internal pressure of the cavity; and a vacuum pump which discharges gas within the cavity such that a pressure detected by the pressure detecting unit becomes equal to or more than a saturated vapor pressure related to the temperature of the temperature adjustment medium jetted from the nozzle and equal to or less than a saturated vapor pressure related to the targeted temperature.
Public/Granted literature
- US20120016508A1 SEMICONDUCTOR FABRICATION APPARATUS AND TEMPERATURE ADJUSTMENT METHOD Public/Granted day:2012-01-19
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