发明授权
US08819354B2 Feedback programmable data strobe enable architecture for DDR memory applications
有权
用于DDR存储器应用的反馈可编程数据选通使能架构
- 专利标题: Feedback programmable data strobe enable architecture for DDR memory applications
- 专利标题(中): 用于DDR存储器应用的反馈可编程数据选通使能架构
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申请号: US11154401申请日: 2005-06-16
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公开(公告)号: US08819354B2公开(公告)日: 2014-08-26
- 发明人: Hui-Yin Seto , Derrick Sai-Tang Butt , Cheng-Gang Kong
- 申请人: Hui-Yin Seto , Derrick Sai-Tang Butt , Cheng-Gang Kong
- 申请人地址: US CA San Jose
- 专利权人: LSI Corporation
- 当前专利权人: LSI Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Christopher P. Maiorana, PC
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
An apparatus comprising a first circuit and a second circuit. The first circuit may be configured to read and write data through a plurality of input/output lines. The second circuit may include a plurality of sections. Each section may be configured to present a control signal to a load output line and receive a feedback of the control signal through a load input line. The load input line and the load output line of each of the sections may be connected to a load circuit configured to match a respective memory load connected to each of the plurality of input/output lines.
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