Invention Grant
US08819358B2 Data storage device, memory system, and computing system using nonvolatile memory device
有权
数据存储设备，存储系统和使用非易失性存储器件的计算系统
- Patent Title: Data storage device, memory system, and computing system using nonvolatile memory device
- Patent Title (中): 数据存储设备，存储系统和使用非易失性存储器件的计算系统
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Application No.: US13770107Application Date: 2013-02-19
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Publication No.: US08819358B2Publication Date: 2014-08-26
- Inventor: KyungWook Ye , Yul-Won Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2007-0107904 20071025
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/02
Abstract:
Provided is a data storage device including two or more data storage areas including may have two or more (heterogeneous) types of nonvolatile memory cells. At least one of the data storage areas includes a plurality of memory blocks that are sequentially selected, and metadata are stored in the currently selected memory block. The memory blocks can be sequentially used and metadata can be stored in a uniformly-distributed manner throughout the data storage device. Therefore, separate merging and wear-leveling operations are unnecessary. Thus, it is possible to improve the lifetime and writing performance of a data storage device having two or more heterogeneous nonvolatile memories.
Public/Granted literature
- US20130173856A1 DATA STORAGE DEVICE, MEMORY SYSTEM, AND COMPUTING SYSTEM USING NONVOLATILE MEMORY DEVICE Public/Granted day:2013-07-04
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