- 专利标题: High temperature thermal annealing process
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申请号: US13547246申请日: 2012-07-12
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公开(公告)号: US08821739B2公开(公告)日: 2014-09-02
- 发明人: Xinyu Gu , Shih-Wei Chang , Phillip D. Hustad , Jeffrey D. Weinhold , Peter Trefonas
- 申请人: Xinyu Gu , Shih-Wei Chang , Phillip D. Hustad , Jeffrey D. Weinhold , Peter Trefonas
- 申请人地址: US MA Marlborough US MI Midland
- 专利权人: Rohm and Haas Electronic Materials LLC,Dow Global Technologies LLC
- 当前专利权人: Rohm and Haas Electronic Materials LLC,Dow Global Technologies LLC
- 当前专利权人地址: US MA Marlborough US MI Midland
- 代理商 Thomas S. Deibert
- 主分类号: B44C1/22
- IPC分类号: B44C1/22 ; B05D3/02 ; B81C1/00 ; B82Y40/00 ; C09D183/00 ; C23C18/00
摘要:
A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(siloxane) block copolymer component; and, an antioxidant to a surface of the substrate; optionally, baking the film; subjecting the film to a high temperature annealing process under a gaseous atmosphere for a specified period of time; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiOx.
公开/授权文献
- US20140014002A1 High temperature thermal annealing process 公开/授权日:2014-01-16
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