发明授权
- 专利标题： DLC film-forming method and DLC film
- 专利标题（中）： DLC成膜法和DLC膜
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申请号： US13378689申请日： 2010-06-09
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公开(公告)号： US08821990B2公开(公告)日： 2014-09-02
- 发明人: Masahiro Suzuki , Toshiyuki Saito , Kazuyoshi Yamakawa
- 申请人： Masahiro Suzuki , Toshiyuki Saito , Kazuyoshi Yamakawa
- 申请人地址： JP Osaka-shi
- 专利权人： JTEKT Corporation
- 当前专利权人： JTEKT Corporation
- 当前专利权人地址： JP Osaka-shi
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2009-146732 20090619; JP2009-219190 20090924; JP2010-114438 20100518
- 国际申请： PCT/JP2010/059774 WO 20100609
- 国际公布： WO2010/147038 WO 20101223
- 主分类号： C23C16/26
- IPC分类号： C23C16/26 ; F16D69/00 ; C23C16/02 ; C23C16/515
摘要：
The present invention provides a DLC film that has good adhesiveness even in a low-temperature environment, and a DLC film-forming method capable of forming this DLC film. The present invention also provides a DLC film that has excellent initial compatibility, and a DLC film-forming method capable of forming this DLC film. In the present invention, a first opposing surface (31) that faces an inner clutch plate, of a substrate (30) of an outer clutch plate (15) is covered by a DLC film (26). Also, a treatment layer (33) is formed on a surface layer portion of the substrate (30). The treatment layer (33) is formed by applying direct-current pulse voltage to the substrate (30), and generating plasma in an atmosphere that contains argon gas and hydrogen gas.
公开/授权文献
- US20120094074A1 DLC FILM-FORMING METHOD AND DLC FILM 公开/授权日：2012-04-19