发明授权
- 专利标题： Semiconductor module including a switching element formed of a wide bandgap semiconductor
- 专利标题（中）： 半导体模块包括由宽带隙半导体形成的开关元件
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申请号： US13600910申请日： 2012-08-31
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公开(公告)号： US08823018B2公开(公告)日： 2014-09-02
- 发明人: Rei Yoneyama , Hiroyuki Okabe , Takahiro Inoue , Shinji Sakai
- 申请人： Rei Yoneyama , Hiroyuki Okabe , Takahiro Inoue , Shinji Sakai
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-280836 20111222
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L31/0312 ; H01L29/16 ; H01L29/66 ; H01L29/78
摘要：
Provided is a semiconductor module having high inrush-current tolerance. A semiconductor module includes a switching element formed of a wide bandgap semiconductor, and a free wheel diode connected in antiparallel with the switching element, wherein the free wheel diode is made of silicon and has negative temperature characteristics.
公开/授权文献
- US20130161644A1 SEMICONDUCTOR MODULE 公开/授权日：2013-06-27