Invention Grant
US08823078B2 Non-volatile memory device having stacked structure, and memory card and electronic system including the same
有权
具有堆叠结构的非易失性存储器件，以及包括其的存储卡和电子系统
- Patent Title: Non-volatile memory device having stacked structure, and memory card and electronic system including the same
- Patent Title (中): 具有堆叠结构的非易失性存储器件，以及包括其的存储卡和电子系统
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Application No.: US13748163Application Date: 2013-01-23
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Publication No.: US08823078B2Publication Date: 2014-09-02
- Inventor: Woo-joo Kim , Yoon-dong Park , Jung-hun Sung , Yong-Koo Kyoung , Sang-moo Choi , Tae-hee Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0003016 20090114
- Main IPC: H01L27/115
- IPC: H01L27/115
Abstract:
Provided are a non-volatile memory devices having a stacked structure, and a memory card and a system including the same. A non-volatile memory device may include a substrate. A stacked NAND cell array may have at least one NAND set and each NAND set may include a plurality of NAND strings vertically stacked on the substrate. At least one signal line may be arranged on the substrate so as to be commonly coupled with the at least one NAND set.
Public/Granted literature
Information query
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