发明授权
US08823087B2 Semiconductor device including auxiliary structure and methods for manufacturing a semiconductor device
有权
包括辅助结构的半导体器件和用于制造半导体器件的方法
- 专利标题： Semiconductor device including auxiliary structure and methods for manufacturing a semiconductor device
- 专利标题（中）： 包括辅助结构的半导体器件和用于制造半导体器件的方法
-
申请号： US13420768申请日： 2012-03-15
-
公开(公告)号： US08823087B2公开(公告)日： 2014-09-02
- 发明人: Franz Hirler , Markus Zundel
- 申请人： Franz Hirler , Markus Zundel
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A semiconductor device includes a trench region extending into a drift zone of a semiconductor body from a surface. The semiconductor device further includes a dielectric structure including a first step and a second step along a lateral side of the trench region. The semiconductor device further includes an auxiliary structure of a first conductivity type between the first step and the second step, a gate electrode in the trench region and a body region of a second conductivity type other than the first conductivity type of the drift zone. The auxiliary structure adjoins each one of the drift zone, the body region and the dielectric structure.
公开/授权文献
信息查询
IPC分类:
