发明授权
- 专利标题: Optical semiconductor device and method for fabricating the optical semiconductor device
- 专利标题(中): 光半导体装置及其制造方法
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申请号: US13043277申请日: 2011-03-08
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公开(公告)号: US08824842B2公开(公告)日: 2014-09-02
- 发明人: Takeshi Matsumoto
- 申请人: Takeshi Matsumoto
- 申请人地址: JP Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JP Kawasaki
- 代理机构: Fujitsu Patent Center
- 优先权: JP2010-064764 20100319
- 主分类号: G02B6/34
- IPC分类号: G02B6/34 ; H01L33/00 ; G02B6/12 ; H01S5/22 ; G02B6/124 ; H01L21/02 ; B82Y20/00 ; H01S5/12 ; H01S5/32 ; H01S5/34
摘要:
An optical semiconductor device, includes: a plurality of first diffraction grating layers disposed at a spacing from each other along first direction above first semiconductor layer, length of a lower surface of each of a plurality of first diffraction gratings along first direction being longer than a length of an upper surface of first diffraction grating; second diffraction grating layer disposed along first direction above first semiconductor layer, first and second diffraction grating layers being alternately disposed at a spacing from each other, a length of an upper surface of second diffraction grating layer along first direction being longer than the length of a lower surface of second diffraction layer; a diffraction grating including first and second diffraction grating layers; a second semiconductor layer disposed between first and second diffraction grating layers and under second diffraction grating layer; and third semiconductor layer disposed on first and second diffraction grating layers.