Invention Grant
US08828845B2 Method of fabricating oxide thin film device using laser lift-off and oxide thin film device fabricated by the same
有权
使用其制造的使用激光剥离和氧化物薄膜器件的氧化物薄膜器件的制造方法
- Patent Title: Method of fabricating oxide thin film device using laser lift-off and oxide thin film device fabricated by the same
- Patent Title (中): 使用其制造的使用激光剥离和氧化物薄膜器件的氧化物薄膜器件的制造方法
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Application No.: US13713396Application Date: 2012-12-13
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Publication No.: US08828845B2Publication Date: 2014-09-09
- Inventor: Chong Yun Kang , Seok Jin Yoon , Young Ho Do , Ji Won Choi , Seung Hyub Baek , Hyun Cheol Song , Jin Sang Kim
- Applicant: Korea Institute of Science and Technology
- Applicant Address: KR Seoul
- Assignee: Korea Institute of Science and Technology
- Current Assignee: Korea Institute of Science and Technology
- Current Assignee Address: KR Seoul
- Agency: Ladas & Parry LLP
- Priority: KR10-2012-0063205 20120613
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/02 ; H01L29/22 ; H01L41/31
Abstract:
Provided is a method of fabricating an oxide thin film device using laser lift-off and an oxide thin film device fabricated by the same. The method includes: forming an oxide thin film on a growth substrate; bonding a temporary substrate on the oxide thin film; irradiating laser onto the growth substrate to separate the oxide thin film on which the temporary substrate has been bonded from the growth substrate; bonding a device substrate on the oxide thin film on which the temporary substrate has been bonded; and forming an upper electrode film on the oxide thin film. Therefore, it is possible to overcome problems caused by a defective layer by transferring an oxide thin film transferred on a polymer-based temporary substrate onto a device substrate, without using an interface on which a defective layer formed due to oxygen diffusion upon laser lift-off is formed.
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