发明授权
US08828852B2 Delta-doping at wafer level for high throughput, high yield fabrication of silicon imaging arrays
有权
在晶圆级别进行增量掺杂，以实现高成本，高成本的硅成像阵列制造
- 专利标题： Delta-doping at wafer level for high throughput, high yield fabrication of silicon imaging arrays
- 专利标题（中）： 在晶圆级别进行增量掺杂，以实现高成本，高成本的硅成像阵列制造
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申请号： US12965790申请日： 2010-12-10
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公开(公告)号： US08828852B2公开(公告)日： 2014-09-09
- 发明人: Michael E. Hoenk , Shoulch Nikzad , Todd J. Jones , Frank Greer , Alexander G. Carver
- 申请人： Michael E. Hoenk , Shoulch Nikzad , Todd J. Jones , Frank Greer , Alexander G. Carver
- 申请人地址： US CA Pasadena
- 专利权人： California Institute of Technology
- 当前专利权人： California Institute of Technology
- 当前专利权人地址： US CA Pasadena
- 代理机构： Milstein Zhang & Wu LLC
- 代理商 Joseph B. Milstein
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/36
摘要：
Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3+NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.
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