发明授权
- 专利标题： Semiconductor layer structure comprising a cavity layer and method for fabricating the semiconductor layer structure
- 专利标题（中）： 包括空腔层的半导体层结构和用于制造半导体层结构的方法
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申请号： US11702011申请日： 2007-02-02
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公开(公告)号： US08829532B2公开(公告)日： 2014-09-09
- 发明人: Brian Murphy , Maik Häberlen , Jörg Lindner , Bernd Stritzker
- 申请人： Brian Murphy , Maik Häberlen , Jörg Lindner , Bernd Stritzker
- 申请人地址： DE Munich
- 专利权人： Siltronic AG
- 当前专利权人： Siltronic AG
- 当前专利权人地址： DE Munich
- 代理机构： Leydig, Voit & Mayer, Ltd.
- 优先权： DE102006004870 20060202
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L31/0312 ; H01L21/265 ; H01L21/02
摘要：
Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region (3) enriched with impurity atoms, which region is situated either in layer (2) or at a specific depth below the interface between layer (2) and substrate (1), additionally a layer (4) within the region (3) enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer (6) applied to layer (2) and also a defect region (5) comprising dislocations and stacking faults within the layer (4) comprising cavities, the at least one epitaxial layer (6) being largely crack-free, and a residual strain of the at least one epitaxial layer (6) being less than or equal to 1 GPa.
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