A nonvolatile programmable switch according to an embodiment includes: a first nonvolatile memory transistor including a first to third terminals connected to a first to third interconnects respectively; a second nonvolatile memory transistor including a fourth terminal connected to a fourth interconnect, a fifth terminal connected to the second interconnect, and a sixth terminal connected to the third interconnect, the first and second nonvolatile memory transistors having the same conductivity type; and a pass transistor having a gate electrode connected to the second interconnect. When the first and fourth interconnects are connected to a first power supply while the third interconnect is connected to a second power supply having a higher voltage than that of the first power supply, a threshold voltage of the first nonvolatile memory transistor increases, and a threshold voltage of the second nonvolatile memory transistor decreases.