发明授权
- 专利标题: Pressure sensor and method for manufacturing pressure sensor
- 专利标题(中): 压力传感器及制造压力传感器的方法
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申请号: US13699614申请日: 2011-05-25
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公开(公告)号: US08829630B2公开(公告)日: 2014-09-09
- 发明人: Masahiro Sakuragi , Toma Fujita , Mizuho Okada
- 申请人: Masahiro Sakuragi , Toma Fujita , Mizuho Okada
- 申请人地址: JP Kyoto
- 专利权人: Rohm Co., Ltd.
- 当前专利权人: Rohm Co., Ltd.
- 当前专利权人地址: JP Kyoto
- 代理机构: Rabin & Berdo, P.C.
- 优先权: JP2010-119704 20100525; JP2010-119705 20100525; JP2010-146360 20100628
- 国际申请: PCT/JP2011/061970 WO 20110525
- 国际公布: WO2011/148973 WO 20111201
- 主分类号: H01L29/84
- IPC分类号: H01L29/84 ; B81C1/00 ; H01L21/762 ; G01L9/00
摘要:
[Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization.[Solving Means] A pressure sensor 1 includes a silicon substrate 2 provided therein with a reference pressure chamber 8, a diaphragm 10, consisting of part of the silicon substrate 2, formed on a surface layer portion of the silicon substrate 2 to partition a reference pressure chamber 8, and an etching stop layer 9 formed on a lower surface of the diaphragm 10 facing the reference pressure chamber 8. A through-hole 11 communicating with the reference pressure chamber 8 is formed on the diaphragm 10, and a filler 13 is arranged in the through-hole 11.
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