发明授权
- 专利标题: Method of manufacturing nitride substrate, and nitride substrate
- 专利标题(中): 氮化物衬底和氮化物衬底的制造方法
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申请号: US13061307申请日: 2009-08-26
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公开(公告)号: US08829658B2公开(公告)日: 2014-09-09
- 发明人: Satoshi Arakawa , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
- 申请人: Satoshi Arakawa , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
- 申请人地址: JP Osaka-shi, Osaka
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JP Osaka-shi, Osaka
- 代理机构: Drinker Biddle & Reath LLP
- 优先权: JP2008-223809 20080901
- 国际申请: PCT/JP2009/064852 WO 20090826
- 国际公布: WO2010/024285 WO 20100304
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; C30B25/00 ; C30B29/40 ; C30B33/00
摘要:
A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.