发明授权
- 专利标题: Gate drive circuit
- 专利标题(中): 门驱动电路
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申请号: US13667896申请日: 2012-11-02
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公开(公告)号: US08829952B2公开(公告)日: 2014-09-09
- 发明人: Hiroshi Sakata , Akihisa Yamamoto , Mitsutaka Hano
- 申请人: Hiroshi Sakata , Akihisa Yamamoto , Mitsutaka Hano
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Studebaker & Brackett PC
- 优先权: JP2012-036450 20120222
- 主分类号: H03K3/00
- IPC分类号: H03K3/00
摘要:
A gate drive circuit of the present invention is a gate drive circuit for driving an insulated gate switching element, which comprises a control drive circuit for applying a driving voltage to a control terminal of the switching element at a predetermined timing, and a voltage monitoring circuit for monitoring both a first voltage which is a power supply voltage of the control drive circuit and a second voltage which negatively biases the control terminal of the switching element, and in the gate drive circuit, the control drive circuit cuts off an output when at least one of the first and second voltages monitored by the voltage monitoring circuit becomes lower than a threshold value. It is an object of the present invention to provide an insulated gate switching element which can suppress wrong ON.
公开/授权文献
- US20130214822A1 GATE DRIVE CIRCUIT 公开/授权日:2013-08-22
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