Invention Grant
- Patent Title: Thin film structure with controlled lateral thermal spreading in the thin film
- Patent Title (中): 薄膜结构在薄膜中具有受控的横向热扩散
-
Application No.: US14060187Application Date: 2013-10-22
-
Publication No.: US08830629B2Publication Date: 2014-09-09
- Inventor: Julius Kurt Hohlfeld , Bin Lu , Ganping Ju , Amit V. Itagi , Timothy Klemmer , Yingguo Peng , Yukiko Kubota
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hollingsworth Davis, LLC
- Main IPC: G11B5/33
- IPC: G11B5/33 ; G11B5/73 ; G11B11/105 ; G11B5/31 ; G11B5/66 ; G11B5/00
Abstract:
An apparatus includes a non-metallic interlayer between a magnetic data storage layer and a heat sink layer, wherein interface thermal resistance between the interlayer and the heat sink layer is capable of reducing heat flow between the heat sink layer and the magnetic data storage layer. The apparatus may be configured as a thin film structure arranged for data storage. The apparatus may also include thermal resistor layer positioned between the interlayer and the heat sink layer.
Public/Granted literature
- US20140043947A1 Thin Film Structure with Controlled Lateral Thermal Spreading in the Thin Film Public/Granted day:2014-02-13
Information query
IPC分类:
