发明授权
- 专利标题: Non-volatile memory with resistive access component
- 专利标题(中): 具有电阻性访问组件的非易失性存储器
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申请号: US13758644申请日: 2013-02-04
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公开(公告)号: US08830738B2公开(公告)日: 2014-09-09
- 发明人: Jun Liu , Michael P. Violette
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Schwegman Lundberg & Woessner, P.A.
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
Some embodiments include apparatus and methods having a memory element configured to store information and an access component configured to allow conduction of current through the memory element when a first voltage difference in a first direction across the memory element and the access component exceeds a first voltage value and to prevent conduction of current through the memory element when a second voltage difference in a second direction across the memory element and the access component exceeds a second voltage value, wherein the access component includes a material excluding silicon.
公开/授权文献
- US20130153849A1 NON-VOLATILE MEMORY WITH RESISTIVE ACCESS COMPONENT 公开/授权日:2013-06-20
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