Invention Grant
- Patent Title: Non-volatile memory with resistive access component
- Patent Title (中): 具有电阻性访问组件的非易失性存储器
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Application No.: US13758644Application Date: 2013-02-04
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Publication No.: US08830738B2Publication Date: 2014-09-09
- Inventor: Jun Liu , Michael P. Violette
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
Some embodiments include apparatus and methods having a memory element configured to store information and an access component configured to allow conduction of current through the memory element when a first voltage difference in a first direction across the memory element and the access component exceeds a first voltage value and to prevent conduction of current through the memory element when a second voltage difference in a second direction across the memory element and the access component exceeds a second voltage value, wherein the access component includes a material excluding silicon.
Public/Granted literature
- US20130153849A1 NON-VOLATILE MEMORY WITH RESISTIVE ACCESS COMPONENT Public/Granted day:2013-06-20
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