Invention Grant
- Patent Title: Memory access method and flash memory using the same
- Patent Title (中): 内存访问方法和闪存使用相同
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Application No.: US13959780Application Date: 2013-08-06
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Publication No.: US08830754B2Publication Date: 2014-09-09
- Inventor: Chung-Kuang Chen , Shuo-Nan Hung , Chun-Hsiung Hung
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A memory access method is applied in a memory controller for accessing a memory array, including a number of respective select switches globally controlled with a string select signal. The memory access method includes: enabling the string select signal and disabling the string select signal before a read phase.
Public/Granted literature
- US20130314997A1 Memory Access Method and Flash Memory Using the Same Public/Granted day:2013-11-28
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