发明授权
- 专利标题: Memory system having a plurality of writing mode
- 专利标题(中): 具有多个写入模式的存储器系统
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申请号: US13038681申请日: 2011-03-02
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公开(公告)号: US08832357B2公开(公告)日: 2014-09-09
- 发明人: Hiroshi Yao , Shinichi Kanno , Kazuhiro Fukutomi
- 申请人: Hiroshi Yao , Shinichi Kanno , Kazuhiro Fukutomi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2010-214221 20100924
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F12/02
摘要:
According to one embodiment, a memory system includes a non-volatile semiconductor memory, a block management unit, and a transcription unit. The semiconductor memory includes a plurality of blocks to which data can be written in both the first mode and the second mode. The block management unit manages a block that stores therein no valid data as a free block. When the number of free blocks managed by the block management unit is smaller than or equal to a predetermined threshold value, the transcription unit selects one or more used blocks that stores therein valid data as transcription source blocks and transcribes valid data stored in the transcription source blocks to free blocks in the second mode.
公开/授权文献
- US20120079167A1 MEMORY SYSTEM 公开/授权日:2012-03-29
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