Invention Grant
US08835216B2 Thin-film transistor, method of fabricating the thin-film transistor, and display substrate using the thin-film transistor
有权
薄膜晶体管，制造薄膜晶体管的方法以及使用该薄膜晶体管的显示基板
- Patent Title: Thin-film transistor, method of fabricating the thin-film transistor, and display substrate using the thin-film transistor
- Patent Title (中): 薄膜晶体管，制造薄膜晶体管的方法以及使用该薄膜晶体管的显示基板
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Application No.: US13932425Application Date: 2013-07-01
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Publication No.: US08835216B2Publication Date: 2014-09-16
- Inventor: Pil-Sang Yun , Young-Wook Lee , Woo-Geun Lee
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2010-0023367 20100316
- Main IPC: H01L21/34
- IPC: H01L21/34 ; H01L27/12 ; H01L21/467 ; H01L29/786 ; H01L29/417
Abstract:
An oxide thin-film transistor (TFT) substrate that includes: a substrate, a gate line, a data line, an oxide TFT, and a pixel electrode. An oxide layer of the oxide TFT includes a first region that has semiconductor characteristics and a channel, and a second region that is conductive and surrounds the first region. A portion of the first region is electrically connected to the pixel electrode, and the second region is electrically connected to the data line.
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