Invention Grant
US08835244B2 Integrated circuits and methods for fabricating integrated circuits having metal gate electrodes
有权
用于制造具有金属栅电极的集成电路的集成电路和方法
- Patent Title: Integrated circuits and methods for fabricating integrated circuits having metal gate electrodes
- Patent Title (中): 用于制造具有金属栅电极的集成电路的集成电路和方法
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Application No.: US13773397Application Date: 2013-02-21
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Publication No.: US08835244B2Publication Date: 2014-09-16
- Inventor: Ruilong Xie , Chanro Park , Shom Ponoth
- Applicant: GlobalFoundries, Inc. , International Business Machines Corporation
- Applicant Address: KY Grand Cayman US NY Armonk
- Assignee: GlobalFoundries, Inc.,International Business Machines Corporation
- Current Assignee: GlobalFoundries, Inc.,International Business Machines Corporation
- Current Assignee Address: KY Grand Cayman US NY Armonk
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/66 ; H01L29/788
Abstract:
Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, a method for fabricating integrated circuits includes providing a sacrificial gate structure over a semiconductor substrate. The sacrificial gate structure includes two spacers and sacrificial gate material between the two spacers. The method recesses a portion of the sacrificial gate material between the two spacers. Upper regions of the two spacers are etched while using the sacrificial gate material as a mask. The method includes removing a remaining portion of the sacrificial gate material and exposing lower regions of the two spacers. A first metal is deposited between the lower regions of the two spacers. A second metal is deposited between the upper regions of the two spacers.
Public/Granted literature
- US20140231885A1 INTEGRATED CIRCUITS AND METHODS FOR FABRICATING INTEGRATED CIRCUITS HAVING METAL GATE ELECTRODES Public/Granted day:2014-08-21
Information query
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