发明授权
US08835257B2 Method of fabricating semiconductor device including a recessed channel
有权
制造包括凹陷通道的半导体器件的方法
- 专利标题: Method of fabricating semiconductor device including a recessed channel
- 专利标题(中): 制造包括凹陷通道的半导体器件的方法
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申请号: US13312176申请日: 2011-12-06
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公开(公告)号: US08835257B2公开(公告)日: 2014-09-16
- 发明人: Young-Pil Kim , Hyung-Ik Lee , Woo-Sung Jeon , Ki-Hong Kim , Jung-Yun Won , In-Sun Jung
- 申请人: Young-Pil Kim , Hyung-Ik Lee , Woo-Sung Jeon , Ki-Hong Kim , Jung-Yun Won , In-Sun Jung
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Lee & Morse, P.C.
- 优先权: KR10-2011-0020462 20110308
- 主分类号: H01L21/762
- IPC分类号: H01L21/762 ; H01L27/105 ; H01L27/108
摘要:
A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.