Invention Grant
- Patent Title: Method of manufacturing semiconductor devices including replacement metal gate process incorporating a conductive dummy gate layer
- Patent Title (中): 包括具有导电虚拟栅极层的替代金属栅极工艺的半导体器件的制造方法
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Application No.: US13664744Application Date: 2012-10-31
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Publication No.: US08835292B2Publication Date: 2014-09-16
- Inventor: Michael P. Chudzik , Min Dai , Xiang Hu , Jinping Liu , Yanxiang Liu , Xiaodong Yang
- Applicant: International Business Machines Corporation , Globalfoundries Inc.
- Applicant Address: US NY Armonk KY Grand Cayman Islands
- Assignee: International Business Machines Corporation,Global Foundries, Inc.
- Current Assignee: International Business Machines Corporation,Global Foundries, Inc.
- Current Assignee Address: US NY Armonk KY Grand Cayman Islands
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: H01L21/3205
- IPC: H01L21/3205

Abstract:
A method of manufacturing a semiconductor device including a replacement metal gate process incorporating a conductive dummy gate layer (e.g., silicon germanium (SiGe), titanium nitride, etc.) and a related are disclosed. The method includes forming an oxide layer on a substrate; removing a gate portion of the oxide layer from the substrate in a first region of the semiconductor device; forming a conductive dummy gate layer on the semiconductor device in the first region; and forming a gate on the semiconductor device, the gate including a gate conductor disposed in the first region and directly connected to the substrate.
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Information query
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