Invention Grant
- Patent Title: Two step deposition of molybdenum dioxide electrode for high quality dielectric stacks
- Patent Title (中): 二级沉积二氧化钼电极用于高质量电介质叠层
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Application No.: US13725701Application Date: 2012-12-21
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Publication No.: US08835310B2Publication Date: 2014-09-16
- Inventor: Sergey Barabash , Dipankar Pramanik , Xuena Zhang
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L49/02
Abstract:
Electrodes, which contain molybdenum dioxide (MoO2) can be used in electronic components, such as memory or logic devices. The molybdenum-dioxide containing electrodes can also have little or no molybdenum element, together with a portion of molybdenum oxide, e.g., MoOx with x between 2 and 3. The molybdenum oxide can be present as molybdenum trioxide MoO3, or in Magneli phases, such as Mo4O11, MO8O23, or Mo9O26. The molybdenum-dioxide containing electrodes can be formed by annealing a multilayer including a layer of molybdenum and a layer of molybdenum oxide. The oxygen content of the multilayer can be configured to completely, or substantially completely, react with molybdenum to form molybdenum dioxide, together with leaving a small excess amount of molybdenum oxide MoOx with x>2.
Public/Granted literature
- US20140175604A1 Two Step Deposition of Molybdenum Dioxide Electrode for High Quality Dielectric Stacks Public/Granted day:2014-06-26
Information query
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