发明授权
US08835933B2 Recessed gate-type silicon carbide field effect transistor and method of producing same
有权
嵌入式栅极型碳化硅场效应晶体管及其制造方法
- 专利标题： Recessed gate-type silicon carbide field effect transistor and method of producing same
- 专利标题（中）： 嵌入式栅极型碳化硅场效应晶体管及其制造方法
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申请号： US13392786申请日： 2010-08-27
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公开(公告)号： US08835933B2公开(公告)日： 2014-09-16
- 发明人: Takahiro Nagano , Mitsuo Okamoto , Tsutomu Yatsuo , Kenji Fukuda
- 申请人： Takahiro Nagano , Mitsuo Okamoto , Tsutomu Yatsuo , Kenji Fukuda
- 申请人地址： JP Tokyo
- 专利权人： National Institute of Advanced Industrial Science and Technology
- 当前专利权人： National Institute of Advanced Industrial Science and Technology
- 当前专利权人地址： JP Tokyo
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： JP2009197601 20090828
- 国际申请： PCT/JP2010/064613 WO 20100827
- 国际公布： WO2011/024956 WO 20110303
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L21/336 ; H01L29/78 ; H01L29/66 ; H01L29/16
摘要：
A SiC MISFET, in which a source region and a drain region (3, 4) are formed in a one-conductivity-type SiC semiconductor region (2), in which a recess (5) with a predetermined depth is formed in a portion of the SiC semiconductor region sandwiched between the source and drain regions, with the recess having two side faces in contact with the source and drain regions, and a bottom face connecting the two side faces, and in which portions (3a, 4a) of the source and drain regions adjacent to the vicinity of both ends of the bottom face of the recess are thinner than other portions.
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