发明授权
- 专利标题: CMOS dual metal gate semiconductor device
- 专利标题(中): CMOS双金属栅极半导体器件
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申请号: US12883241申请日: 2010-09-16
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公开(公告)号: US08836038B2公开(公告)日: 2014-09-16
- 发明人: Yong-Tian Hou , Peng-Fu Hsu , Jin Ying , Kang-Cheng Lin , Kuo-Tai Huang , Tze-Liang Lee
- 申请人: Yong-Tian Hou , Peng-Fu Hsu , Jin Ying , Kang-Cheng Lin , Kuo-Tai Huang , Tze-Liang Lee
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater and Matsil, L.L.P.
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/8238 ; H01L21/28 ; H01L29/66
摘要:
A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a first MOS device of a first conductivity type and a second MOS device of a second conductivity type opposite the first conductivity type. The first MOS device includes a first gate dielectric on a semiconductor substrate; a first metal-containing gate electrode layer over the first gate dielectric; and a silicide layer over the first metal-containing gate electrode layer. The second MOS device includes a second gate dielectric on the semiconductor substrate; a second metal-containing gate electrode layer over the second gate dielectric; and a contact etch stop layer having a portion over the second metal-containing gate electrode layer, wherein a region between the portion of the contact etch stop layer and the second metal-containing gate electrode layer is substantially free from silicon.
公开/授权文献
- US20110001194A1 Hybrid Process for Forming Metal Gates 公开/授权日:2011-01-06