Invention Grant
US08836070B2 Photo diode, method of manufacturing the photo-diode, and photo sensor including the photo diode
有权
光电二极管，制造光电二极管的方法，以及包含光电二极管的光电传感器
- Patent Title: Photo diode, method of manufacturing the photo-diode, and photo sensor including the photo diode
- Patent Title (中): 光电二极管，制造光电二极管的方法，以及包含光电二极管的光电传感器
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Application No.: US13137726Application Date: 2011-09-08
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Publication No.: US08836070B2Publication Date: 2014-09-16
- Inventor: Won-Kyu Lee , Jae-Beom Choi , Jae-Hwan Oh , Young-Jin Chang , Seong-Hyun Jin
- Applicant: Won-Kyu Lee , Jae-Beom Choi , Jae-Hwan Oh , Young-Jin Chang , Seong-Hyun Jin
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0108411 20101102
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A photo diode includes an intrinsic region on a substrate, a P+ doping region in a first portion of the intrinsic region, and an oxide semiconductor region. The oxide semiconductor region is spaced apart from the P+ doping region on a second portion of the intrinsic region and the second portion of the intrinsic region is different from the first portion of the intrinsic region.
Public/Granted literature
- US20120104382A1 Photo diode, method of manufacturing the photo-diode, and photo sensor including the photo diode Public/Granted day:2012-05-03
Information query
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