发明授权
- 专利标题: Memory output circuit
- 专利标题(中): 存储器输出电路
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申请号: US13176858申请日: 2011-07-06
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公开(公告)号: US08837244B2公开(公告)日: 2014-09-16
- 发明人: Shih-Huang Huang
- 申请人: Shih-Huang Huang
- 申请人地址: TW Hsin-Chu
- 专利权人: Mediatek Inc.
- 当前专利权人: Mediatek Inc.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: McClure, Qualey & Rodack, LLP
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G11C7/10 ; G11C7/18 ; G11C7/06 ; G11C7/12
摘要:
The invention provides a memory output circuit. The memory output circuit is capable of receiving bit line data and bit bar line data output by a memory cell array. In one embodiment, the memory output circuit comprises a pre-charge circuit, a pre-amplifier circuit, and a sense amplifier. The pre-charge circuit is capable of pre-charging a first node and a first inverse node wherein the bit line data and bit bar line data are respectively output to the first node and the first inverse node. The pre-amplifier circuit is capable of generating a second voltage on a second node and a second inverse voltage on a second inverse node according to a first voltage on the first node and a first inverse voltage on the first inverse node. The sense amplifier is capable of detecting the second voltage on the second node and the second inverse voltage on the second inverse node to generate a third voltage on a third node and a third inverse voltage on a third inverse node.
公开/授权文献
- US20130010559A1 MEMORY OUTPUT CIRCUIT 公开/授权日:2013-01-10