发明授权
US08837247B2 Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle
有权
使用可控硅整流器原理操作具有浮体晶体管的半导体存储器件的方法
- 专利标题： Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle
- 专利标题（中）： 使用可控硅整流器原理操作具有浮体晶体管的半导体存储器件的方法
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申请号： US14023246申请日： 2013-09-10
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公开(公告)号： US08837247B2公开(公告)日： 2014-09-16
- 发明人: Yuniarto Widjaja
- 申请人： Yuniarto Widjaja
- 申请人地址： US CA Cupertino
- 专利权人： Zeno Semiconductor, Inc.
- 当前专利权人： Zeno Semiconductor, Inc.
- 当前专利权人地址： US CA Cupertino
- 代理机构： Law Office of Alan W. Cannon
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
An exemplary semiconductor memory cell is provided to include: a floating body region configured to be charged to a level indicative of a state of the memory cell; a first region in electrical contact with the floating body region; a second region in electrical contact with the floating body region and spaced apart from the first region; a gate positioned between the first and second regions; a buried layer region in electrical contact with the floating body region, below the first and second regions, spaced apart from the first and second regions; and a substrate region configured to inject charge into the floating body region to maintain the state of the memory cell; wherein an amount of charge injected into the floating body region is a function of a charge stored in the floating body region.