发明授权
- 专利标题: Method for producing a doped organic semiconducting layer
- 专利标题(中): 掺杂有机半导体层的制造方法
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申请号: US12919989申请日: 2009-02-25
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公开(公告)号: US08841153B2公开(公告)日: 2014-09-23
- 发明人: Britta Goeoetz , Thomas Dobbertin , Karsten Diekmann , Andreas Kanitz , Guenter Schmid , Arvid Hunze
- 申请人: Britta Goeoetz , Thomas Dobbertin , Karsten Diekmann , Andreas Kanitz , Guenter Schmid , Arvid Hunze
- 申请人地址: DE Regensburg
- 专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人地址: DE Regensburg
- 代理机构: Cozen O'Connor
- 优先权: DE102008011185 20080227
- 国际申请: PCT/DE2009/000280 WO 20090225
- 国际公布: WO2009/106068 WO 20090903
- 主分类号: H01L51/50
- IPC分类号: H01L51/50 ; H01L51/00
摘要:
A process is provided for producing a doped organic semiconductive layer, comprising the process steps of A) providing a matrix material, B) providing a dopant complex, and C) simultaneously applying the matrix material and the dopant complex to a substrate by vapor deposition, wherein, in process step C), the dopant complex is decomposed and the pure dopant is intercalated into the matrix material.
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