发明授权
US08841164B2 Process for producing indium oxide-containing layers, indium oxide-containing layers produced by the process and use thereof
有权
用于生产含氧化铟的层的方法,通过该方法制备的含氧化铟的层及其用途
- 专利标题: Process for producing indium oxide-containing layers, indium oxide-containing layers produced by the process and use thereof
- 专利标题(中): 用于生产含氧化铟的层的方法,通过该方法制备的含氧化铟的层及其用途
-
申请号: US13516900申请日: 2010-11-25
-
公开(公告)号: US08841164B2公开(公告)日: 2014-09-23
- 发明人: Jürgen Steiger , Duy Vu Pham , Heiko Thiem , Alexey Merkulov , Arne Hoppe
- 申请人: Jürgen Steiger , Duy Vu Pham , Heiko Thiem , Alexey Merkulov , Arne Hoppe
- 申请人地址: DE Essen
- 专利权人: Evonik Degussa GmbH
- 当前专利权人: Evonik Degussa GmbH
- 当前专利权人地址: DE Essen
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: DE102009054997 20091218
- 国际申请: PCT/EP2010/068185 WO 20101125
- 国际公布: WO2011/073005 WO 20110623
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium halogen alkoxide of the generic formula InX(OR)2 where R=alkyl radical and/or alkoxyalkyl radical and X=F, Cl, Br or I and at least one solvent or dispersion medium is, in the sequence of points a) to d), in anhydrous atmosphere, a) applied to the substrate, b) the composition applied to the substrate is irradiated with electromagnetic radiation of wavelength ≦360 nm and c) optionally dried, and then d) converted thermally to an indium oxide-containing layer, to the layers producible by the process and to the use thereof.
公开/授权文献
信息查询
IPC分类: