Manufacturing of a semiconductor device and corresponding semiconductor device

Invention Grant

US08841186B2 Manufacturing of a semiconductor device and corresponding semiconductor device 有权

Title translation: 制造半导体器件和相应的半导体器件

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Patent Title: Manufacturing of a semiconductor device and corresponding semiconductor device
Patent Title (中): 制造半导体器件和相应的半导体器件
Application No.: US13582142

Application Date: 2010-03-04
Publication No.: US08841186B2

Publication Date: 2014-09-23
Inventor: Alexander Hoelke , Deb Kumar Pal , Kia Yaw Kee , Yang Hao
Applicant: Alexander Hoelke , Deb Kumar Pal , Kia Yaw Kee , Yang Hao
Applicant Address: DE Erfurt
Assignee: X-Fab Semiconductor Foundries AG
Current Assignee: X-Fab Semiconductor Foundries AG
Current Assignee Address: DE Erfurt
Agency: Duane Morris LLP
International Application: PCT/IB2010/050949 WO 20100304
International Announcement: WO2011/107832 WO 20110909
Main IPC: H01L21/336
IPC: H01L21/336 ; H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L21/265 ; H01L29/66 ; H01L29/423

Manufacturing of a semiconductor device and corresponding semiconductor device

Abstract:

The disclosed method of manufacturing (110, 120, 130, 140) a semiconductor device (12) has the steps (112, 114, 116) of: forming at least one wall (33) of a body (44) of the semiconductor device (12) by etching at least one trench (22) for a gate (42) of the semiconductor device (12) into the body (44); and performing a slanted implantation doping (126, 128) into the at least one wall (33) of the body (44), after the etching (112) of the at least one trench (22) and prior to coating the at least one trench (22) with an insulating layer (29). A semiconductor device (12) comprises at least one trench (22) for a gate (42) of the semiconductor device (12); and a body (44) having at least one wall (33) of the at least one trench (22), wherein a deviation (64) of a doping concentration (62) along a distance (66) in depth-direction (do) of the at least one trench (22) in a surface (33) of the at least one wall (33) is less than ten percent of a maximum value (68) of the doping concentration (62) along the distance (66).

Abstract(Chinese):

所公开的制造（110,120,130,140）半导体器件（12）的方法具有以下步骤：形成半导体器件的主体（44）的至少一个壁（33）（12）通过将用于半导体器件（12）的栅极（42）的至少一个沟槽（22）蚀刻到主体（44）中; 以及在所述至少一个沟槽（22）的所述蚀刻（112）之后并且在涂覆所述至少一个沟槽（22）之前，在所述主体（44）的所述至少一个壁（33）中执行倾斜注入掺杂（126,128）具有绝缘层（29）的沟槽（22）。半导体器件（12）包括用于半导体器件（12）的栅极（42）的至少一个沟槽（22）; 以及具有所述至少一个沟槽（22）的至少一个壁（33）的主体（44），其中沿着深度方向（do）的距离（66）的掺杂浓度（62）的偏差（64）在所述至少一个壁（33）的表面（33）中的所述至少一个沟槽（22）的距离小于所述距离（66）的所述掺杂浓度（62）的最大值（68）的百分之十。

Public/Granted literature

US20120319193A1 MANUFACTURING OF A SEMICONDUCTOR DEVICE AND CORRESPONDING SEMICONDUCTOR DEVICE Public/Granted day:2012-12-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的