发明授权
US08841661B2 Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
有权
交错氧化物半导体TFT半导体器件及其制造方法
- 专利标题: Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
- 专利标题(中): 交错氧化物半导体TFT半导体器件及其制造方法
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申请号: US12700758申请日: 2010-02-05
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公开(公告)号: US08841661B2公开(公告)日: 2014-09-23
- 发明人: Kengo Akimoto , Masashi Tsubuku
- 申请人: Kengo Akimoto , Masashi Tsubuku
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2009-042575 20090225
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L27/12 ; H01L21/02
摘要:
A method for forming a thin film transistor includes steps of forming a first wiring layer over a first electrode layer and forming a second wiring layer over a second electrode layer, wherein the first electrode layer extends beyond an end portion of the first wiring layer, the second electrode layer extends beyond an end portion of the second wiring layer, and a semiconductor layer is formed so as to be electrically connected to a side face and a top face of the first electrode layer and a side face and a top face of the second electrode layer.
公开/授权文献
- US20100213461A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日:2010-08-26