A description is given of an optoelectronic semiconductor chip (1) comprising a semiconductor layer sequence (2), which has an active zone (4) for generating electromagnetic radiation, and comprising a structured current spreading layer (6), which contains a transparent conductive oxide and is arranged on a main area (12) of the semiconductor layer sequence (2), wherein the current spreading layer (6) covers at least 30% and at most 60% of the main area (12).