发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13347004申请日： 2012-01-10
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公开(公告)号： US08841719B2公开(公告)日： 2014-09-23
- 发明人: Seigo Oosawa , Shoji Mizuno , Yutaka Tomatsu
- 申请人： Seigo Oosawa , Shoji Mizuno , Yutaka Tomatsu
- 申请人地址： JP Kariya
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JP2011-3962 20110112; JP2011-24785 20110208; JP2011-271505 20111212
- 主分类号： H01L29/417
- IPC分类号： H01L29/417 ; H01L29/66 ; H01L29/739 ; H01L23/00 ; H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/45 ; H01L29/40
摘要：
A semiconductor device includes: a semiconductor substrate; an interlayer film on the substrate; a surface electrode on the interlayer film; a surface pad on the surface electrode; a backside electrode on the substrate; an element area including a cell portion having a vertical semiconductor element and a removal portion having multiple contact regions; and an outer periphery area. The surface electrode in the removal portion is electrically coupled with each contact region through a first contact hole in the interlayer film. The surface electrode in the cell portion is electrically coupled with the substrate through a second contact hole in the interlayer film. A part of the surface electrode in the removal portion facing each contact region is defined as a contact portion. The surface electrode includes multiple notches on a shortest distance line segment between each contact portion and the surface pad.
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