发明授权
US08842399B2 ESD protection of an RF PA semiconductor die using a PA controller semiconductor die
有权
使用PA控制器半导体管芯的RF PA半导体管芯的ESD保护
- 专利标题： ESD protection of an RF PA semiconductor die using a PA controller semiconductor die
- 专利标题（中）： 使用PA控制器半导体管芯的RF PA半导体管芯的ESD保护
-
申请号： US13288373申请日： 2011-11-03
-
公开(公告)号： US08842399B2公开(公告)日： 2014-09-23
- 发明人: David E. Jones , William David Southcombe , Chris Levesque , Scott Yoder , Terry J. Stockert
- 申请人： David E. Jones , William David Southcombe , Chris Levesque , Scott Yoder , Terry J. Stockert
- 申请人地址： US NC Greensboro
- 专利权人： RF Micro Devices, Inc.
- 当前专利权人： RF Micro Devices, Inc.
- 当前专利权人地址： US NC Greensboro
- 代理机构： Withrow & Terranova, P.L.L.C.
- 主分类号： H02H3/22
- IPC分类号： H02H3/22 ; H03F1/52 ; H03F3/24 ; H03F3/19 ; H02H9/04
摘要：
A power amplifier (PA) controller semiconductor die and a first radio frequency (RF) PA semiconductor die are disclosed. The PA controller semiconductor die includes a first electro-static discharge (ESD) protection circuit, which ESD protects and provides a first ESD protected signal. The RF PA semiconductor die receives the first ESD protected signal. In one embodiment of the PA controller semiconductor die, the first ESD protected signal is an envelope power supply signal. The PA controller semiconductor die may be a Silicon complementary metal-oxide-semiconductor (CMOS) semiconductor die and the RF PA semiconductor die may be a Gallium Arsenide semiconductor die.
公开/授权文献
信息查询
