发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13422294申请日： 2012-03-16
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公开(公告)号： US08847303B2公开(公告)日： 2014-09-30
- 发明人: Masaru Kito , Ryota Katsumata
- 申请人： Masaru Kito , Ryota Katsumata
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-250475 20111116
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L27/115
摘要：
According to one embodiment, a semiconductor device includes: a substrate; a stacked body provided above the substrate, including a selector gate and an insulating layer provided on the selector gate; an insulating film provided on a sidewall of a hole formed by penetrating the stacked body in the stacking direction; a channel body and a semiconductor layer. The channel body is provided on a sidewall of the insulating film in the hole, that blocks the hole near an end of the insulating layer side in the selector gate, and that encloses a cavity below a part that blocks the hole. The semiconductor layer is formed of a same material as the channel body and is embedded continuously in the hole above the part where the channel body blocks the hole.
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