发明授权
- 专利标题: Cascode CMOS structure
- 专利标题(中): Cascode CMOS结构
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申请号: US12766972申请日: 2010-04-26
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公开(公告)号: US08847321B2公开(公告)日: 2014-09-30
- 发明人: Fu-Lung Hsueh , Chih-Ping Chao , Chewn-Pu Jou , Yung-Chow Peng , Harry-Hak-Lay Chuang , Kuo-Tung Sung
- 申请人: Fu-Lung Hsueh , Chih-Ping Chao , Chewn-Pu Jou , Yung-Chow Peng , Harry-Hak-Lay Chuang , Kuo-Tung Sung
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; G06F17/50 ; H01L27/088
摘要:
A MOS device includes an active area having first and second contacts. First and second gates are disposed between the first and second contacts. The first gate is disposed adjacent to the first contact and has a third contact. The second gate is disposed adjacent to the second contact and has a fourth contact coupled to the third contact. A transistor defined by the active area and the first gate has a first threshold voltage, and a transistor defined by the active area and the second gate has a second threshold voltage.
公开/授权文献
- US20110215420A1 CASCODE CMOS STRUCTURE 公开/授权日:2011-09-08