发明授权
- 专利标题： High voltage semiconductor element and operating method thereof
- 专利标题（中）： 高压半导体元件及其工作方法
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申请号： US13401652申请日： 2012-02-21
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公开(公告)号： US08848325B2公开(公告)日： 2014-09-30
- 发明人: Hsin-Liang Chen , Wen-Ching Tung
- 申请人： Hsin-Liang Chen , Wen-Ching Tung
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McClure, Qualey & Rodack, LLP
- 主分类号： H03K17/06
- IPC分类号： H03K17/06
摘要：
A high voltage semiconductor element and an operating method thereof are provided. The high voltage semiconductor element comprises a high voltage metal-oxide-semiconductor transistor (HVMOS) and a NPN type electro-static discharge bipolar transistor (ESD BJT). The HVMOS has a drain and a source. The NPN type ESD BJT has a first collector and a first emitter. The first collector is electronically connected to the drain, and the first emitter is electronically connected to the source.
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