发明授权
US08848495B1 Plasmon generator self-annealing with current injection in TAMR
有权
在TAMR中电流注入的等离子体发生器自退火
- 专利标题: Plasmon generator self-annealing with current injection in TAMR
- 专利标题(中): 在TAMR中电流注入的等离子体发生器自退火
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申请号: US14093993申请日: 2013-12-02
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公开(公告)号: US08848495B1公开(公告)日: 2014-09-30
- 发明人: Yan Wu , Kowang Liu
- 申请人: Headway Technologies, Inc.
- 申请人地址: US CA Milpitas
- 专利权人: Headway Technologies, Inc.
- 当前专利权人: Headway Technologies, Inc.
- 当前专利权人地址: US CA Milpitas
- 代理机构: Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号: G11B11/24
- IPC分类号: G11B11/24
摘要:
A dual plasmon generator (PG) mirror image structure is used during fabrication of a TAMR head to locally anneal the PGs without substantially elevating the temperature in adjacent layers. Two PGs have narrow peg portions aligned head to head, and larger back end portions with a back side facing away from the eventual ABS. A first lead is attached to a back side of a first PG while a second lead is connected to a back side of a second PG. A 10 mA current is injected into a first PG and exits from the second PG and causes resistive heating in the rod-like portions where the temperature may be raised by 250° C. or more. A temporary overcoat layer may be formed over the PGs to dissipate heat and to keep the PGs from deforming during the annealing step.
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