Invention Grant
- Patent Title: Tessellated patterns in imprint lithography
- Patent Title (中): 压印光刻中的镶嵌图案
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Application No.: US11694612Application Date: 2007-03-30
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Publication No.: US08850980B2Publication Date: 2014-10-07
- Inventor: Sidlgata V. Sreenivasan , Philip D. Schumaker , Ian M. McMackin
- Applicant: Sidlgata V. Sreenivasan , Philip D. Schumaker , Ian M. McMackin
- Applicant Address: US TX Austin
- Assignee: Canon Nanotechnologies, Inc.
- Current Assignee: Canon Nanotechnologies, Inc.
- Current Assignee Address: US TX Austin
- Agent Cameron A. King
- Main IPC: B29C59/02
- IPC: B29C59/02 ; H01L21/02 ; G03F9/00 ; B82Y40/00 ; G03F7/00 ; G03B27/42 ; G03B27/62 ; B82Y10/00
Abstract:
The present invention is directed towards a choice of the shape of the patterned fields for Level 0 (patterned by imprint or photolithography or e-beam, etc.) and Level 1 (patterned by imprint) such that these shapes when tessellated together eliminate the open areas causes by the moats.
Public/Granted literature
- US20070247608A1 Tesselated Patterns in Imprint Lithography Public/Granted day:2007-10-25
Information query
