Invention Grant
US08851012B2 Vapor deposition reactor using plasma and method for forming thin film using the same
有权
使用等离子体的气相沉积反应器和使用其形成薄膜的方法
- Patent Title: Vapor deposition reactor using plasma and method for forming thin film using the same
- Patent Title (中): 使用等离子体的气相沉积反应器和使用其形成薄膜的方法
-
Application No.: US12560690Application Date: 2009-09-16
-
Publication No.: US08851012B2Publication Date: 2014-10-07
- Inventor: Sang In Lee
- Applicant: Sang In Lee
- Applicant Address: US CA Fremont
- Assignee: Veeco ALD Inc.
- Current Assignee: Veeco ALD Inc.
- Current Assignee Address: US CA Fremont
- Agency: Fenwick & West LLP
- Priority: KR10-2008-0090968 20080917; KR10-2009-0086313 20090914
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/455 ; C23C16/54
Abstract:
A vapor deposition reactor may include a first electrode including a first channel and at least one first injection hole connected to the first channel. a second electrode electrically separated from the first electrode, and a power source for applying power between the first electrode and the second electrode to generate plasma from a reactant gas between the first electrode and the second electrode. Also provided is a method for forming thin film using the vapor deposition reactor.
Public/Granted literature
- US20100068413A1 VAPOR DEPOSITION REACTOR USING PLASMA AND METHOD FOR FORMING THIN FILM USING THE SAME Public/Granted day:2010-03-18
Information query
IPC分类:
