Invention Grant
- Patent Title: Power storage device and method for manufacturing the same
- Patent Title (中): 蓄电装置及其制造方法
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Application No.: US13101598Application Date: 2011-05-05
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Publication No.: US08852294B2Publication Date: 2014-10-07
- Inventor: Shunpei Yamazaki
- Applicant: Shunpei Yamazaki
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2010-122770 20100528
- Main IPC: H01G9/00
- IPC: H01G9/00 ; H01G11/86 ; H01G11/30 ; H01G11/26 ; H01G11/70 ; H01G9/04 ; H01G9/008 ; H01G11/28 ; H01G11/84 ; H01G11/12 ; H01G11/50

Abstract:
To provide a method for forming an electrode for a storage battery, including the step of: forming a metal layer which is over a current collector and has an edge portion; and forming a crystalline silicon layer, which is over the etched metal layer and includes a silicon whisker, as an active material layer by a low pressure chemical vapor deposition (LPCVD) method in which heating is performed with the use of a deposition gas containing silicon.
Public/Granted literature
- US20110292564A1 POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-12-01
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