Invention Grant
US08852344B2 Large area deposition in high vacuum with high thickness uniformity
有权
大面积沉积在高真空下具有高厚度均匀性
- Patent Title: Large area deposition in high vacuum with high thickness uniformity
- Patent Title (中): 大面积沉积在高真空下具有高厚度均匀性
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Application No.: US13280131Application Date: 2011-10-24
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Publication No.: US08852344B2Publication Date: 2014-10-07
- Inventor: Giacomo Benvenuti , Estelle Halary-Wagner , Simone Amorosi , Patrik Hoffmann
- Applicant: Giacomo Benvenuti , Estelle Halary-Wagner , Simone Amorosi , Patrik Hoffmann
- Applicant Address: CH Lausanne
- Assignee: Ecole Polytechnique Federale de Lausanne (EPFL)
- Current Assignee: Ecole Polytechnique Federale de Lausanne (EPFL)
- Current Assignee Address: CH Lausanne
- Agency: Nixon & Vanderhye P.C.
- Priority: CHPCT/CH02/00241 20020503
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/455 ; H01L21/306 ; C30B23/06 ; C23C14/24
Abstract:
The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.
Public/Granted literature
- US20120037077A1 LARGE AREA DEPOSITION IN HIGH VACUUM WITH HIGH THICKNESS UNIFORMITY Public/Granted day:2012-02-16
Information query
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